Morphology, Electrical Performance and Potentiometry of PDIF-CN2 Thin-Film Transistors on HMDS-Treated and Bare Silicon Dioxide

نویسندگان

  • Fabio Chiarella
  • Mario Barra
  • Laura Ricciotti
  • Alberto Aloisio
  • Antonio Cassinese
چکیده

In this work, the electrical response of n-type organic field-effect transistors, achieved by evaporating PDIF-CN2 films on both bare and Hexamethyldisilazane (HMDS) treated SiO2 substrates, was investigated by standard electrical characterization and potentiometry. Morphological and charge transport characterizations demonstrated that the hydrophobic degree of the substrate surface has a huge impact on the final response of the devices. The PDIF-CN2 transistors on HMDS-treated substrates show a maximum mobility of 0.7 cm 2 /Volt·s, three orders of magnitude greater than in the case of the device without surface functionalization. The scanning Kelvin probe microscopy technique was used to perform surface potentiometry to image the local surface potential inside the channel during the transistor operation and has allowed us to identify the film morphological disorder as the primary factor that could compromise the effectiveness of the charge injection process from gold contacts to PDIF-CN2 films. For optimized devices on HMDS-treated substrates, SKPM was also used to analyze, over time, the evolution of the potential profile when negative VGS voltages were applied. The findings of these OPEN ACCESS Electronics 2014, 3 77 measurements are discussed taking into account the role of VGS-induced proton migration towards SiO2 bulk, in the operational stability of the device.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hybrid organic-inorganic porous semiconductor transducer for multi-parameters sensing.

Porous silicon (PSi) non-symmetric multi-layers are modified by organic molecular beam deposition of an organic semiconductor, namely the N,N'-1H,1H-perfluorobutyldicyanoperylene-carboxydi-imide (PDIF-CN2). Joule evaporation of PDIF-CN2 into the PSi sponge-like matrix not only improves but also adds transducing skills, making this solid-state device a dual signal sensor for chemical monitoring....

متن کامل

Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors

Articles you may be interested in A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization Appl. Improvement of the electrical performance in metal-induced lat...

متن کامل

Structure of Pentacene Monolayers on Amorphous Silicon Oxide and Relation to Charge Transport

Organic semiconductors are attracting considerable research interest due to already commercialized and potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, thin film transistors and related applications (e.g. TFT sensors), RF identification tags (RFID), smart cards electronic paper etc.). In the field of organic semiconductor research, the materia...

متن کامل

Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Polyvinylpyrrolidone  /  Nickel  oxide  (PVP/NiO)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  PVP  at  different working  temperatures  of  80,  150  and  200  ºC.  Structural  properties and surface morphology of the hybrid films were investigated by X- Ray  diffraction  (XRD)  and  Scanning  Electron Microscope  (SEM) respectively. Energy dispersive X-ray spec...

متن کامل

Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors

Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014